METHOD FOR MANUFACTURING TRANSISTOR, TRANSISTOR, ELECTROOPTICAL SUBSTRATE, ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To prevent warping of a substrate or occurrence of a missing part in a semiconductor film by not performing sacrifice oxidation when the semiconductor film becoming an active layer is made thin. SOLUTION: At first, an insulating layer 11b is formed in a semiconductor substrate 206 using SIMOX method and then the semiconductor substrate 206 is pasted to an insulating substrate 10A. Subsequently, the semiconductor substrate 206 is separated (stripped) from the insulating substrate 10A except a surface layer part including the insulating layer 11b. Thereafter, a multilayer film of semiconductor films 11a and 1a insulated from each other by the insulating layer 11b is formed on the insulating substrate 10A by patterning followed by formation of a gate insulating film 2 and a gate electrode on the semiconductor film 11a. Since the semiconductor film 11a can be made a region not contributing to electrical conduction, the semiconductor film 1a becoming an active layer can be made thin correspondingly. The semiconductor film 11a insulated from the active layer 1a can be utilized as a light shielding film. COPYRIGHT: (C)2005,JPO&NCIPI