| 摘要 |
PROBLEM TO BE SOLVED: To enable a thin film having a low impurity content to be effectively formed on a substrate preventing a low-permittivity interface layer from being formed on an interface between the thin film and the substrate. SOLUTION: A method of manufacturing a semiconductor device comprises a film depositing process and a film modifying process. In the film depositing process, material gas sent from a film forming material feed unit 9 is fed into a reaction chamber 1 through a shower head 6 to form a hafnium-containing thin film on a rotating substrate 4. In the film modifying process, oxygen-free argon radicals as reactants generated in a reactant activation unit 11 are fed through the same shower head 6 which feeds the film forming gas, so as to remove impurity elements contained in the thin film formed in the film depositing process. By a control device 25, the film depositing process and the film modifying process are successively carried out a few times in the same reaction chamber 1 to form the semiconductor device. COPYRIGHT: (C)2005,JPO&NCIPI
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