| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth device which is capable of forming a semiconductor layer of high film quality with high productivity. SOLUTION: A gas feed pipe 12 for group III material gas is inserted into holes bored in substrate holders 18 and 19. Wafers 41 are fixed to the substrate holders 18 and 19 with covers 21 and fixing members 22 and 23. The substrate holders 18, 19, and 20 are linked together with the fixing members 22 and 23. All the substrate holders 18, 19, and 20 are revolved by a motor 26 around the group III material gas feed pipe 12 as a center axis, and the wafers 41 held by the substrate holders 18, 19, and 20 are revolved around the group III material gas feed pipe 12. Exhaust nozzles 25 are provided to the side of the group III material gas feed pipe 12 so as to spout out the group III material gas, and growing gas is fed vertically and laterally in a radial manner. COPYRIGHT: (C)2005,JPO&NCIPI
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