| 摘要 |
PROBLEM TO BE SOLVED: To prevent the decrease of an epitaxial growth rate due to a susceptor supporting part becoming high in temperature. SOLUTION: A manufacturing device of a silicon carbide single crystal is provided with a susceptor 3 consisting of carbon, a susceptor supporting part 4 for supporting the susceptor and a means 6 for heating the susceptor 3, and the device is constituted so that the manufacture of the silicon carbide single crystal is performed by supplying a gaseous starting material from the susceptor supporting part 4 side toward the susceptor 3 side after the arrangement of a substrate 7 at the wall surface of the susceptor 3. The susceptor supporting part 4 is formed with a heat conducting anisotropic material in which the thermal conductivity with respect to the passage direction of the gaseous starting material is smaller than that with respect to the perpendicular direction of a passage of the gaseous starting material. COPYRIGHT: (C)2005,JPO&NCIPI
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