摘要 |
[Object] To provide semiconductor devices in which rewirings can be readily processed finely and accurately, and methods for manufacturing the same. [Means for Solution] A method for manufacturing a semiconductor device in accordance with the present invention is equipped with a step of forming wirings 9a, 9b on a semiconductor substrate 1; a step of forming a passivation film 10 over the wirings; a step of forming a first dielectric film 11 over the passivation film; a step of forming a groove for rewiring in the first dielectric film; a step of forming a conductive layer in the groove for rewiring and on the first dielectric film; and a step of forming a rewiring 15 composed of the conductive layer embedded in the groove for rewiring and the connection hole by polishing/removing the conductive layer that is present on the first dielectric film by CMP.
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