发明名称 Semiconductor device and method for manufacturing the same
摘要 [Object] To provide semiconductor devices in which rewirings can be readily processed finely and accurately, and methods for manufacturing the same. [Means for Solution] A method for manufacturing a semiconductor device in accordance with the present invention is equipped with a step of forming wirings 9a, 9b on a semiconductor substrate 1; a step of forming a passivation film 10 over the wirings; a step of forming a first dielectric film 11 over the passivation film; a step of forming a groove for rewiring in the first dielectric film; a step of forming a conductive layer in the groove for rewiring and on the first dielectric film; and a step of forming a rewiring 15 composed of the conductive layer embedded in the groove for rewiring and the connection hole by polishing/removing the conductive layer that is present on the first dielectric film by CMP.
申请公布号 US2004207088(A1) 申请公布日期 2004.10.21
申请号 US20040788331 申请日期 2004.03.01
申请人 SEIKO EPSON CORP 发明人 MOROZUMI YUKIO
分类号 H01L21/304;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/31;H01L23/485;H01L23/52;H01L23/525;H01L23/532;(IPC1-7):H01L23/48 主分类号 H01L21/304
代理机构 代理人
主权项
地址