| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming an etching mask which can etch a foundation layer to a prescribed pattern highly precisely and to provide a method of manufacturing a semiconductor device. <P>SOLUTION: In the method of forming the etching mask, a mask layer is formed of a lamination structure of a non-photosensitive lower layer resist film 5, an intermediate layer 6 and a photosensitive upper layer resist film 7, the upper layer resist film 7 is exposed and developed to a prescribed pattern, the intermediate layer 6 is etched by using the obtained pattern as a mask, and thereafter an etching mask is formed by etching the lower layer resist film 5 by using the intermediate layer 6 as a mask. The method has a process for flattening the surface of the intermediate layer 6 in an interface with the upper layer resist film 7 and/or the surface of the lower layer resist film 5 in an interface with the intermediate layer 6 by chemical mechanical polishing or the like. Pattern precision of an etching mask is improved by improving exposure precision by forming the upper layer resist film 7 uniform in thickness. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
