SILICON SUBSTRATE ETCHING METHOD AND ETCHING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a silicon substrate etching method etc. having a high etching speed and capable of obtaining an etching structure excellent in unevenness and the degree of the right angle of a wall surface. SOLUTION: In an etching process, the following processes are repeated in turn: i.e. a process in which dry etching in an etching ground is mainly advanced using a mixed gas of an SF6gas and a fluorocarbon gas, while applying firm power to a silicon substrate to supply bias potential; and a process in which a protective film is mainly formed on a structure perpendicular to the etching ground using the same mixed gas. The mixed gas in the dry etching advancing process is prepared by mixing the fluorocarbon gas of 5-12 volume is mixed into the SF6gas of 100 volume, and the mixed gas in the protective film forming process is prepared by mixing the SF6of 2-5 volume into the fluorocarbon gas of 100 volume. COPYRIGHT: (C)2005,JPO&NCIPI