发明名称 SUBSTRATE PROCESSING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To prevent the deterioration of temperature measurement accuracy by preventing the leakage of heat rays. SOLUTION: A single wafer CVD system 70 comprises a processing chamber 71 for processing a wafer W, gas head 80 for supplying a processing gas to the processing chamber 71, susceptor 98 for holding the wafer W, heating unit 87 for heating the wafer W, and radiation thermometer which detects light (heat rays 114) emitted from the susceptor 98 and measures the temperature thereof. The radiation thermometer comprises a waveguide rod 112 made of quartz and a layer 113 having a refractive index different from that of the waveguide rod which is stuck to the outer surface of the waveguide rod 112. Due to this structure, a full reflection surface of the waveguide rod which is an interface with the layer having a refractive index different from that of the waveguide rod is protected against the attachment of a film due to a reaction product gas or the like, resulting in preventing the leakage of light passing inside the waveguide rod. Consequently, the deterioration of measurement accuracy of the radiation thermometer can be prevented. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004296571(A) 申请公布日期 2004.10.21
申请号 JP20030084257 申请日期 2003.03.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 OKADA ITARU;SUEYOSHI MAMORU;SAKAMOTO NO;NISHITANI EISUKE
分类号 C23C16/52;H01L21/02;H01L21/205;H01L21/22;(IPC1-7):H01L21/205 主分类号 C23C16/52
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