发明名称 |
Substrate processing method and substrate processing apparatus |
摘要 |
A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.
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申请公布号 |
US2004209201(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20040845122 |
申请日期 |
2004.05.14 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NAKANO MASAYUKI;DEGUCHI YOICHI |
分类号 |
G03F7/40;G03F7/20;G03F7/30;H01L21/027;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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