发明名称 |
MR (magnetoresistance) device and magnetic recording device |
摘要 |
Disclosed is a magnetoresistance device which uses a ferromagnetic tunnel junction formed by inserting an insulating layer between two ferromagnetic layers and whose application to a magnetic head and a magnetoresistance memory is promising. The magnetoresistance device has a multilayer structure which has a ferromagnetic tunnel junction formed by lamination of a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, and in which at least one of the first and second ferromagnetic layers is a half-metallic ferromagnet formed of a material having such an electronic structure that one spin having a metallic band near Fermi energy has a gap at a level of higher energy than the Fermi energy and the other spin has a metallic band at the same level.
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申请公布号 |
US2004207961(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20030700519 |
申请日期 |
2003.11.05 |
申请人 |
ICHIMURA MASAHIKO;HASHIZUME TOMIHIRO;ONOGI TOSHIYUKI;ITO KENCHI;MATSUOKA HIDEYUKI |
发明人 |
ICHIMURA MASAHIKO;HASHIZUME TOMIHIRO;ONOGI TOSHIYUKI;ITO KENCHI;MATSUOKA HIDEYUKI |
分类号 |
G11B5/39;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/10;(IPC1-7):G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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