METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE TO PREVENT GENERATION OF FLUORINE AND P2O5

摘要

PURPOSE: A method for forming a gate of a semiconductor device is provided to prevent the generation of fluorine(F) and P2O5 by depositing a conductive polymer on a polysilicon layer without using dual poly system. CONSTITUTION: A gate oxide layer(3) is formed on a silicon substrate(1). A polysilicon layer and an oxide layer are formed on the gate oxide layer. An oxide trench is formed on the polysilicon layer by etching the oxide layer using a gate mask pattern. A conductive polymer(11a) is formed in the oxide trench. The oxide layer is then removed. A gate(5a) is formed by etching the polysilicon layer using the conductive polymer as an etch barrier.