发明名称 PROCESS FOR FABRICATING MULTILAYER PHOTOVOLTAIC ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a process for fabricating a multilayer photovoltaic element capable of realizing a multilayer photovoltaic element having a high conversion efficiency in which energy can be collected efficiently over the entire wavelength region of the incident light. <P>SOLUTION: In the process for fabricating a multilayer photovoltaic element by forming at least a first metal oxide layer 103, a first photovoltaic element 104, a second metal oxide layer 105, and a second photovoltaic element 106 sequentially on a substrate 101, the substrate 101 is set at an earth potential and at least H<SB>2</SB>O is introduced as sputter gas when the first metal oxide layer 103 is formed, and the substrate 101 is set at a non-earth potential and at least O<SB>2</SB>is introduced as sputter gas when the second metal oxide layer 105 is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004296597(A) 申请公布日期 2004.10.21
申请号 JP20030084536 申请日期 2003.03.26
申请人 CANON INC 发明人 NAKAMURA TETSUO;TOKAWA MAKOTO
分类号 C23C14/08;C23C14/34;H01L31/04;(IPC1-7):H01L31/04 主分类号 C23C14/08
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