发明名称 METHOD FOR MAKING SILICON CASTING MOLD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a silicon casting mold by which the oxidized consumption is reduced in the case of using graphite as a mold material and the increase of oxygen concentration is suppressed and such problems that the mold releasing is exfoliated and mixed into molten silicon and the mold can not reuse by sticking the releasing agent to the mold, in the case of pouring the molten silicon into the mold, in the case of solidifying thereafter or in the case of melting silicon raw material charged into the mold, are solved. <P>SOLUTION: In the method for making the silicon casting mold in which the releasing agent film is formed on its inner surface, the releasing agent film contains silicon nitride 201 and amorphous fine silica 202 obtained by heating treatment by jetting silicon tetrachloride into high temperature flame of hydrogen gas and oxygen gas, and the fine silica 202 is mixed with the above silicon nitride 201 to be 10 to 90 wt.% in the mixture. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004291027(A) 申请公布日期 2004.10.21
申请号 JP20030087351 申请日期 2003.03.27
申请人 KYOCERA CORP 发明人 MATSUI HIROSHI;YAMATANI MUNEYOSHI
分类号 B22C3/00;C04B41/87;H01L31/04;(IPC1-7):B22C3/00 主分类号 B22C3/00
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