| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic element capable of attaining a high fill factor F.F. while sustaining a low series resistance component and a high open circuit voltage Voc. <P>SOLUTION: An i-type amorphous silicon film 2 and a p-type amorphous silicon film 3 are formed sequentially on the major surface (surface side) of an n-type single crystal silicon substrate 1. An i-type amorphous silicon film 6 and an n-type amorphous silicon film 7 are formed sequentially on the rear surface of the n-type single crystal silicon substrate 1. A layer 21 introduced with B is formed in the i-type amorphous silicon film 2 by introducing B (boron) into a partial region in the thickness direction. Consequently, the i-type amorphous silicon film 2 has a three layer structure where the layer 21 introduced with B is sandwiched by layers not introduced with B. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
