| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a phase shift mask which solves a problem relating to the dimensional difference in a resist pattern on a wafer, which is practical with firm adhesion strength between a light shielding film and a transparent substrate, and which mostly avoids deposition of contaminations on the mask pattern surface and can easily remove the contaminations depositing on the mask pattern surface, and to improve the accuracy of semiconductor manufacturing processes, in particular, in lithographic processes by using the above phase shift mask which suppresses peeling of the light shielding film and suppresses stray light. <P>SOLUTION: The phase shift mask has a pattern having a light shielding part which cuts the exposure light (part of the light shielding film 1) and a transparent part which transmits the exposure light, both formed on a transparent substrate 2, in such a structure that one of the transparent parts adjacent to each other with the light shielding part interposed is engraved. The engraved depth of the engraved structure of the transparent part is equal to the thickness of the light shielding part. The surface of the transparent part not engraved and the surface of the light shielding part form a face of the same level. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
