| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask having the high precision of a pattern position and capable of responding to pattern microminiaturization, a method of manufacturing the same, and a semiconductor device manufactured by using the mask. <P>SOLUTION: The mask comprises a second thin film 4 which is stacked on a first thin film 3 and thicker than the first thin film, first openings 13A formed in the first thin film and having dimensions smaller than prescribed ones, a second opening 15A formed in the second thin film and having dimensions larger than the prescribed ones, and first exposure-beam-transmitting parts which are overlapping parts of the first openings 13A and the second opening 15A and which contain the first openings 13A. The method of manufacturing the mask, and the semiconductor device manufactured using the mask, are also disclosed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
