| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an exposure mask requiring no complementary division of an opening-like exposure pattern, an exposure method using that exposure mask, and a process for fabricating a semiconductor device. <P>SOLUTION: In the exposure mask 1 where a doughnut pattern 3 and a plurality of long patterns 5 are provided on a thin film membrane 2 as an opening-like exposure pattern, a crosslinking pattern 7 thinner than the minimum line width of the doughnut pattern 3 and the long patterns 5 is stretched across the opposite sides at the opening part of the doughnut pattern 3 and the long patterns 5. In the pattern exposure using that exposure mask 1, only the doughnut pattern 3 and the long patterns 5 are resolved while regulating light exposure within a range where the crosslinking pattern 7 is not resolved. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
