| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode which can be restrained from rising locally in temperature even when an ESD voltage is applied and has a high ESD resistance. SOLUTION: A diode 100 is equipped with a first conductivity-type impurity diffusion region 30, and a second conductivity-type impurity diffusion region 40 on the surface layer of a semiconductor substrate 1. A pn junction is formed in an adjoining area between the first conductivity-type impurity diffusion region 30 and the second conductivity-type impurity diffusion region 40. The peak position Rc of impurity concentration in the first conductivity-type impurity diffusion region 30 and/or the second conductivity-type impurity diffusion region 40 is located at a position deeper than the surface of the semiconductor substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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