| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor which is improved in hot carrier-resistant properties. SOLUTION: The MOS transistor is equipped with a side wall 9 which is formed in contact with the sides of a gate electrode 8 and a gate insulating film 7, and the one main surface of a semiconductor substrate 1. The distribution of nitrogen concentration possessed by the side wall 9 in a cross section perpendicular to the one main surface of the semiconductor substrate 1 has a peak at its interface with the gate electrode 8, and nitrogen is introduced into an oxide film which is to serve as the side wall 9 so as to enable another concentration peak to be located at its interface with an interlayer insulating film 10. COPYRIGHT: (C)2005,JPO&NCIPI
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