Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device

摘要

Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%<=Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.