METHOD FOR FORMING PATTERNS ALIGNED ON EITHER SIDE OF A THIN FILM

摘要

The invention concerns a method for forming patterns (11, 22) aligned on either side of a thin film (3) deposited on a substrate (1). The method comprises: depositing a first patterned layer (5) on the thin film (3), the deposition of the first patterned layer preceding or following local etching of the thin film (3) to form a first mark, etching the first patterned layer to form a first pattern (11), depositing a first bonding layer (13) to cover the first mark (8) and the first pattern (11), eliminating the substrate (1), etching the first bonding layer (13) to form a second mark (16) at the location of the first mark (8), depositing a second patterned layer (18), and etching the second patterned layer (18) to form the second pattern (22).