SPUTTER ETCH METHOD AND METAL PLUG OF SEMICONDUCTOR DEVICE USING THE SAME TO REDUCE INTERFACE CONTACT RESISTANCE OF CONTACT HOLE

摘要

PURPOSE: A sputter etch method and a metal plug of a semiconductor device using the same are provided to reduce interface contact resistance of a contact hole by conditioning a sputter etch chamber before sputter etching. CONSTITUTION: A dummy substrate(220) is loaded on a wafer chuck(210) of a sputter etch chamber(200). By conditioning the sputter etch chamber, particles(140) attaching at inner walls of the chamber are removed. Then, an etch target substrate is loaded in the sputter etch chamber. The sputter etch target substrate is etched by sputtering.