METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH FINE LINE-WIDTH

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to easily control fine line-width and to improve productivity by using a hard mask instead of a photoresist pattern. CONSTITUTION: An oxide layer(11) is formed on a substrate(10). A polysilicon layer(12) is formed on the oxide layer. A hard mask layer is formed on the polysilicon layer. A hard mask pattern(13) is formed by selectively etching the hard mask layer using a photoresist pattern(15) as a mask. The polysilicon layer is then etched using the hard mask pattern as a mask.