COMPOSITION FOR DEPOSITING METAL LAYER AND METHOD FOR FORMING METAL LAYER USING THE SAME TO IMPROVE STEP COVERAGE

摘要

PURPOSE: A composition for depositing a metal layer and a method for forming a metal layer using the same are provided to improve a step coverage by forming a cobalt layer of high purity. CONSTITUTION: A composition for depositing a metal layer includes an organic transition metal compound precursor and a carrier gas of 1 to 39 parts by volume, and hydrogen of 1 to 399 parts by volume. In the composition, the organic transition metal compound precursor and the carrier gas corresponds to 1 to 5 parts by volume and the hydrogen corresponds to 1 to 59 parts by volume. The organic transition metal compound precursor has cobalt-cobalt bonds.