发明名称 |
ETCHANT COMPOSITION ETCHING DOUBLE LAYER AND SINGLE LAYER OF METAL THIN FILM TOGETHER |
摘要 |
PURPOSE: An etchant composition is provided, which can etches together a molybdenum/aluminum-neodymium(Mo/Al-Nd) double layer and a molybdenum(Mo) single layer for gate and source/drain electrodes of a circuit of a TFT LCD. CONSTITUTION: The etchant composition comprises: 50-60wt% of phosphoric acid; 0.5-2.5wt% of nitric acid; 15-25wt% of acetic acid; 0.1-1wt% of at least one alcohol and/or substituted ammonium hydroxide selected from the group of consisting of C1-C3 alkanol and ammonium hydroxide substituting at least one hydrogen by C1-C4 alkyls, wherein the substituted ammonium hydroxide is tetramethyl ammonium hydroxide; and the balance of water. |
申请公布号 |
KR20040088108(A) |
申请公布日期 |
2004.10.16 |
申请号 |
KR20030022116 |
申请日期 |
2003.04.08 |
申请人 |
IL DONG CHEMICAL CO., LTD. |
发明人 |
BAEK, JIN SU;JUNG, JUNG GI;NOH, JAE HO;PARK, HYO JUN |
分类号 |
C09K13/06 |
主分类号 |
C09K13/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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