发明名称 ETCHANT COMPOSITION ETCHING DOUBLE LAYER AND SINGLE LAYER OF METAL THIN FILM TOGETHER
摘要 PURPOSE: An etchant composition is provided, which can etches together a molybdenum/aluminum-neodymium(Mo/Al-Nd) double layer and a molybdenum(Mo) single layer for gate and source/drain electrodes of a circuit of a TFT LCD. CONSTITUTION: The etchant composition comprises: 50-60wt% of phosphoric acid; 0.5-2.5wt% of nitric acid; 15-25wt% of acetic acid; 0.1-1wt% of at least one alcohol and/or substituted ammonium hydroxide selected from the group of consisting of C1-C3 alkanol and ammonium hydroxide substituting at least one hydrogen by C1-C4 alkyls, wherein the substituted ammonium hydroxide is tetramethyl ammonium hydroxide; and the balance of water.
申请公布号 KR20040088108(A) 申请公布日期 2004.10.16
申请号 KR20030022116 申请日期 2003.04.08
申请人 IL DONG CHEMICAL CO., LTD. 发明人 BAEK, JIN SU;JUNG, JUNG GI;NOH, JAE HO;PARK, HYO JUN
分类号 C09K13/06 主分类号 C09K13/06
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