METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH CAPACITOR TO PREVENT DEGRADATION OF DIELECTRIC FILM

摘要

PURPOSE: A method for forming a semiconductor device with a capacitor is provided to prevent degradation of a dielectric film by performing diffusion plasma annealing after depositing the dielectric film. CONSTITUTION: A lower electrode(112a) is formed on a semiconductor substrate(101). A pretreatment layer(114) is formed on the lower electrode by using a rapid thermal nitridation method, a rapid thermal oxidation method or chemical vapor deposition method. A dielectric film is deposited on the resultant structure. By performing diffusion plasma annealing, an annealed dielectric film(116a) is formed.