发明名称 TREATMENT SOLUTION FOR REMOVING METAL REMAINED ON SURFACE INSULATION FILM BY ETCHING METAL LAYER FORMED SUBSTRATE TO FINE-PITCH ON SURFACE OF INSULATION FILM, AND METHOD FOR USING THE TREATMENT SOLUTION
摘要 PURPOSE: To provide a plating pre-treatment solution capable of manufacturing a film carrier whose electrical characteristics are not easily deteriorated by removing a copper alloy alloyed with such metals as nickel and chromium from an insulation film between wirings, and a method for using the plating pre-treatment solution. CONSTITUTION: The plating pre-treatment solution comprising organic sulfonic acid, thiourea, fluoroboric acid, and hypophosphorous acid, wherein the organic sulfonic acid is at least one compound selected from the group consisting of phenol sulfonic acid, methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid, 2-propane sulfonic acid, butane sulfonic acid, 2-butane sulfonic acid, pentane sulfonic acid and chloropropane sulfonic acid, wherein the plating pre-treatment solution contains 80 to 240 g/L of organic sulfonic acid, 80 to 240 g/L of thiourea, 30 to 100 g/L of fluoroboric acid, and 30 to 100 g/L of hypophosphorous acid, wherein the plating pre-treatment solution further contains 10 g/L or more of surfactant, and wherein the plating pre-treatment solution removes metals remained on the insulation film of a film carrier tape in which wiring patterns are formed on the surface of an insulation film.
申请公布号 KR20040087963(A) 申请公布日期 2004.10.15
申请号 KR20040024434 申请日期 2004.04.09
申请人 MITSUI MINING & SMELTING CO., LTD. 发明人 KATAOKA TATSUO;AKASHI YOSHIKAZU
分类号 C25D5/34;C23C18/18;C23F1/16;H01L21/48;H01L21/60;H05K3/26;(IPC1-7):C25D5/34 主分类号 C25D5/34
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