| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a Si single crystal, by which metal impurities in the Si single crystal being used as a raw material for semiconductor silicon wafers can be reduced. SOLUTION: The method of manufacturing the Si single crystal comprises segregating the metal impurities in an Si single crystal ingot pulled by a Czochralski method in the outer peripheral part, and then the outer peripheral part of the Si single crystal ingot is removed by grinding. COPYRIGHT: (C)2005,JPO&NCIPI
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