CLEANING COMPOSITION FOR REMOVING PHOTORESIST POLYMER GENERATED FROM ETCHING PROCESS AND ASHING PROCESS

摘要

PURPOSE: A cleaning composition is provided to easily remove a deteriorated photoresist polymer formed in the etching process and the ashing process and to minimize the corrosion of metal film. CONSTITUTION: The cleaning composition for removing a photoresist polymer comprises (a) 5 to 15 wt% of sulfuric acid, (b) 1 to 5 wt% of hydrogen peroxide or 0.0001 to 0.5 wt% of ozone, (c) 0.1 to 5 wt% of acetic acid, (d) 0.0001 to 0.5 wt% of ammonium fluoride and (e) the balance of water.