| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal and a polycrystal having proper crystallinity at low temperature and to provide a semiconductor device having high reliability by using a solid phase growing method. SOLUTION: In order to deposit an amorphous semiconductor thin film on a substrate or an insulating film, particularly, the amorphus semiconductor thin film is formed so that a mean atomic interval distribution of the amorphous film made of a main element constituting the film substantially coincides with that of the single crystal, recrystallization energy is imparted to the amorphous semiconductor thin film, and a solid phase growth is performed to form a single crystal semiconductor thin film 3. COPYRIGHT: (C)2005,JPO&NCIPI
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