SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To solve a problem of the circuit constitution and an occupied area caused because it is difficult to obtain the maximum forward bias voltage to temperature changes though recently the applying a forward bias voltage to a well (substrate) of a MOS transistor attracts attention. SOLUTION: A semiconductor integrated circuit device is provided with a MISFET 1;2, which is formed by a well 10;20 of a second conductivity-type (n;p), having a source electrode S, a drain electrode D, and gate electrode G of a first conductivity-type (p+;n+). The device is provided with substrate bias circuits 110;111 to 113 generated a potential Vbp;Vbn of the well 10;20 by flowing a prescribed current Ibp;Ibn in the forward direction to a diode 11;21 formed by the source electrode S and the well 10;20 of the MISFER 1;2. COPYRIGHT: (C)2005,JPO&NCIPI