| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser element which has excellent integration nature and which can be easily manufactured. SOLUTION: This surface-emitting semiconductor laser element includes a lower multilayer reflection film 2, a light emitting layer 3 formed on the lower multilayer reflection film 2, and an upper multilayer reflection film 4 formed on the light emitting layer 3. At least one layer of the lower multilayer reflection film 2 and the upper multilayer reflection film 4 includes a first region disposed at least at the part of a region corresponding to the light emitting part 3a of the light emitting layer 3, and having a thickness of substantiallyλ/4n (λ: oscillation wavelength, n: refractive index) and a second region disposed on a region except the first region and having a thickness of substantially exceptλ/4n. COPYRIGHT: (C)2005,JPO&NCIPI
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