| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser element which can suppress the decrease of a yield caused by the large unevenness of the width of current constriction. SOLUTION: This surface-emitting semiconductor laser element includes a lower multilayer reflecting film 2, a light emitting layer 3 formed on the lower multilayer reflecting film 2, and an upper multilayer reflecting film 4 formed on the light emitting layer 3. At least one set of a high refractive index layer 4b and a low refractive index layer 4a of the lower multilayer reflecting film 2 and the upper multilayer reflecting film 4 include a first region disposed on the region corresponding to the light emitting part 3a of the light emitting layer 3 between the high refractive index layer 4b and the low refractive index layer 4a, and having a composition transition layer 4c in which a composition between the composition of the high refractive index layer 4b and the composition of the low refractive index layer 4a is gradually changed; and a second region disposed on the region except the first region between the high refractive index layer 4b and the low refractive index layer 4a and having no composition transition layer 4c. COPYRIGHT: (C)2005,JPO&NCIPI
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