| 摘要 |
PROBLEM TO BE SOLVED: To provide a method to reduce oxide growth on STI walls by depositing and etching a nitride liner to create a thin side wall prior to the STI liner oxidation and to provide a method to make the moat nitride pull back process possible in the present of the STI nitride liner process for STI stress reduction by depositing and etching a nitride liner to create a thin side wall nitride prior to the filling of a STI gap. SOLUTION: The method of improving STI gap fill and moat nitride pull back is provided by after the steps of growing a pad oxide 14, depositing a nitride layer 18 on the pad oxide and the steps of moat patterning, moat etching and moat clean, the steps of growing thermal oxide, deglazing a part of the moat nitride; depositing a thin nitride liner, etching the nitride to form a thin side wall nitride in the STI trench; and performing oxide film deglazing by hydroflouric (HF) acid before STI liner oxidating and depositing oxide to fill the trench. COPYRIGHT: (C)2005,JPO&NCIPI
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