| 摘要 |
PROBLEM TO BE SOLVED: To improve a process for growing GaN crystal utilizing metal Ga vapor and nitrogen plasma such that crystal growth can be sustained. SOLUTION: In the process for growing GaN crystal, a vertical reaction tube (1) including a first end part having a gas inlet (21) and a second end part having an exhaust port (22) is prepared, a substrate (11) is placed in the reaction tube and a crucible (2) for holding Ga solution (12) is disposed at one end part, a specified pressure level is sustained in the reaction tube by exhausting from the exhaust port, Ga vapor from the Ga solution is transported onto the substrate by carrier gas (21a) introduced from the gas inlet, nitrogen plasma (13a) is introduced from above the substrate, and GaN crystal is grown by causing direct reaction of the Ga vapor and the nitrogen plasma on the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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