SWITCHING DEVICE BY ORGANIC SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To form a protective film at a low temperature while shielding water vapor and gas in a switching device by an organic semiconductor material. SOLUTION: On the board material 101 which does not let gas, such as a glass substrate, pass, a cathode electrode 102 is formed, thereon the organic semiconductor material 104 is formed, and thereon an anode electrode 103 is formed. On the semiconductor material 104 and the anode electrode 103, a first protective layer 111 composed of polyparaxylene such as polyparaxylene parylene (R) is formed by coating or depositing. A second protective layer 112 of SiO2or the like composed of ceramics is formed by coating or depositing. A shielding film composed of polyparaxylene or ceramics which shield gas or water vapor may be formed on the board material 101 side. A humidity shielding film composed of polyparaxylene or a gas shielding film composed of ceramics may be formed on the rear face of the board material 101. COPYRIGHT: (C)2005,JPO&NCIPI