METHOD FOR DEPOSITING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a film which can deposit a film having a small mixture concentration of a raw material, which can be deposited even on a member having a low heat resistance and which can hold semiconductor characteristics. SOLUTION: The method for depositing the film includes the steps of depositing a first film as a target by a plasma CVD method in the same chamber, and depositing a second film on the surface to be treated of a substrate by sputtering the first film. The deterioration of a semiconductor device can be suppressed by using the method for depositing the film for the protective film of a semiconductor element. COPYRIGHT: (C)2005,JPO&NCIPI