发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a hole cleaning method of cleaning any hole bored in an interlayer insulating film capable of efficiently and surely removing deposits on the side wall or bottom of a processed part, and to provide a method of manufacturing a semiconductor device which is simple and capable of reducing the manufacturing cost of the device. SOLUTION: The hole is bored in the interlayer insulating film, a film formed of resin substantially having no polar group is formed on the surface of the interlayer insulating film including the hole, and then the resin film is separated from the surface of the insulating film so as to remove deposits from the hole. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004288756(A) 申请公布日期 2004.10.14
申请号 JP20030076711 申请日期 2003.03.20
申请人 FUJITSU LTD 发明人 NAMIKI TAKAHISA;NAKADA YOSHIHIRO;SUGIURA IWAO;SUZUKI KATSUMI
分类号 H01L21/768;H01L21/304;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/768
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