| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of improving the reliability of write operations, and to provide a control method therefor. SOLUTION: The semiconductor storage device is provided with a plurality of word lines formed along a 1st direction, a plurality of bit lines formed along a 2nd direction perpendicular to the 1st direction, memory cells which are magnetic arranged at the intersections of the word lines and the bit lines and include magneto-resistive elements, row decoders for selecting a word line, column decoders for selecting a bit line, and a write circuit for supplying 1st and 2nd write currents, respectively, to the word line and the bit line selected by the row decoder and the column decoder, and writing data to the selected memory cells arranged at the intersections of the selected word line and the selected bit line, and the write circuit varies the 1st and 2nd write current values according to temperatures. COPYRIGHT: (C)2005,JPO&NCIPI
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