发明名称 |
INTERNAL VOLTAGE GENERATION CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide an internal voltage generation circuit and a method capable of improving overshooting of an internal voltage level even if the level of an external power voltage rises in an overdriving operation. SOLUTION: This internal voltage generation circuit is composed of: a comparator for comparing a reference voltage with an internal voltage to output a first drive signal; an internal voltage drive part for outputting the internal voltage by responding to the first drive signal; an internal voltage sensing part for sensing the internal voltage to generate a second drive signal by responding to an active signal; and an overdriving control transistor for controlling the level of the first drive signal by responding to the second drive signal. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004288190(A) |
申请公布日期 |
2004.10.14 |
申请号 |
JP20040080134 |
申请日期 |
2004.03.19 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
MOON BYONG-MO;LEE TAE-SUNG;KIM DAE HWAN |
分类号 |
G11C11/413;G05F1/56;G11C5/14;(IPC1-7):G05F1/56 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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