发明名称 |
METHOD FOR MEASURING DEGREE OF ETCHING |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device capable of exactly obtaining an etching degree during and/or after an etching process independently of an etching method of a material. SOLUTION: The method and the device for obtaining the etching degree of the material 25 by arranging detector elements 60 and 72 adjacently to a part of the material 25 to be etched are provided. The element widths W1 and W2 varies. The resistance of the detector element is measured during etching of a part. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004285477(A) |
申请公布日期 |
2004.10.14 |
申请号 |
JP20040082377 |
申请日期 |
2004.03.22 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT CO LP |
发明人 |
BARNES TED W;CHAVARRIA VICTORIO;SUDYKA WILLIAM J;GHOZEIL ADAM;EMERY TIMOTHY R |
分类号 |
B41J2/045;B41J2/055;B41J2/16;C23F1/02;C23F1/24;C23F4/00;G01N27/04;H01L21/306;H01L21/3065;(IPC1-7):C23F1/24 |
主分类号 |
B41J2/045 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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