发明名称 SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering apparatus which is suitable for performing deposition on a large-area substrate. SOLUTION: A plasma-generating part 10 generates surface wave-excited plasma P using an energy of a surface wave S transmitted across the surface of a dielectric plate 2. When a negative DC voltage or high-frequency power is applied to a target 5, component particles in the target 5 are sputtered by ions in the plasma P and deposited on the substrate 100. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004285453(A) 申请公布日期 2004.10.14
申请号 JP20030081944 申请日期 2003.03.25
申请人 SHIMADZU CORP 发明人 SUZUKI MASAYASU
分类号 C23C14/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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