| 摘要 |
An asymmetry thin-film transistor includes a substrate, a semiconductor layer and a gate positioned on the substrate. The semiconductor layer includes a first lightly doped region and a first heavily doped region adjacent to a first gate side, and a second lightly doped region together with a second heavily doped region adjacent to a second gate side. A first junction is between the first lightly doped region and the first heavily doped region. A second junction is between the second lightly doped region and the second heavily doped region. A distance between the first junction and the first gate side is unequal to a distance between the second junction and the second gate side.
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