发明名称 |
PATTERNING METAL STACK LAYERS OF MAGNETIC SWITCHING DEVICE, UTILIZING A BILAYER METAL HARDMASK |
摘要 |
The invention relates to magnetic switching devices, and more particularly to a method for patterning metal stack layers of a magnetic switching device utilizing TiN and W as a bilayer metal hardmask (7, 8) patterned in two lithography steps with concommitant hardmask open etch and resist strip steps. The hardmask materials TiN and W are chosen so that the mask open etch chemistry is designed with good selectivity, thereby enabling patterning of the hardmask layers prior to etching of the metal stack layers. |
申请公布号 |
WO2004040602(A3) |
申请公布日期 |
2004.10.14 |
申请号 |
WO2003EP12017 |
申请日期 |
2003.10.29 |
申请人 |
INFINEON TECHNOLOGIES AG;IBM INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COSTRINI, GREG;HUMMEL, JOHN, P.;STOJAKOVIC, GEORGE;LOW, KIA-SENG |
分类号 |
G11C11/16;H01F41/30;H01L43/12 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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