发明名称 |
Selective etching of substrates with control of the etch profile |
摘要 |
A wet etching system for selectively patterning substrates having regions covered with self-assembled monolayers (SAM) thereby controlling the etch profile. The system contains a) a liquid etching solution; and b) at least one additive to the liquid etching solution having a higher affinity to the regions of the substrate covered with the SAMs than to the other regions of the substrate. Also provided is a method of selectively patterning substrates having regions covered with self-assembled monolayers (SAMs), thereby controlling the etch profile, the method consisting of the steps of a) providing a liquid etching solution; b) adding at least one additive to said etching solution having a higher affinity to the regions of the substrate covered with the SAMs than to the other regions of the substrate; and c) etching said substrate with said liquid etching solution containing at least one additive. |
申请公布号 |
US2004200575(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20020081860 |
申请日期 |
2002.02.22 |
申请人 |
BIETSCH ALEXANDER;DELAMARCHE EMMANUEL;MICHEL BRUNO;SCHMID HEINZ;GEISLER MATTHIAS |
发明人 |
BIETSCH ALEXANDER;DELAMARCHE EMMANUEL;MICHEL BRUNO;SCHMID HEINZ;GEISLER MATTHIAS |
分类号 |
C23F1/00;C23F1/02;C23F1/34;C23F1/40;H01L21/768;(IPC1-7):C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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