| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for producing a reflective mask capable of realizing good pattern transfer with excellent profile precision while thinning a buffer layer. <P>SOLUTION: The process for producing a reflective mask comprises (a) a step for producing reflective mask blanks 10 by forming a reflective multilayer film 2, a buffer layer 3 and an absorber layer 4 sequentially on a substrate 1, (b) a step for forming a specified pattern 4a on the absorber layer 4, and (c) a step for repairing a pattern defect of the absorber layer 4 occurred in the step (b). The buffer layer 3 is composed of a simple substance of Cr or a material principally comprising Cr and the repairing step of (c) includes electron beam irradiation to a part of the absorber layer 4 for correcting the pattern defect. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
