| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a highly reliable multilayered wiring structure that can eliminate the trouble of disconnection, and to provide a method of manufacturing the device. SOLUTION: In this semiconductor device, aluminum wiring 21 is formed on an insulating film 10 as a wiring layer and side-wall spacers 11 are formed in the aluminum wiring 21 for easing steps. Then a CVD film 12 which covers at least the aluminum wiring 21 and side-wall spacers 11 is formed on the insulating film 10 as the second film of an interlayer insulating film IL1 and a spin-coated film 13 which is further improved in flatness is formed on the CVD film 12 as the third film of the interlayer insulating film IL1. In addition, another CVD film 14 is formed on the spin-coated film 13 as the fourth film of the interlayer insulating film IL1. The interlayer insulating film IL1 is formed in such constitution. Moreover, a via hole 31 is formed and upper-layer aluminum wiring 22 is connected to the aluminum wiring 21. COPYRIGHT: (C)2005,JPO&NCIPI
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