| 摘要 |
A method of manufacturing a semiconductor device, comprises, forming an insulator layer on an integrated circuit, forming a barrier layer comprised of a first titanium film and a titanium nitride film on the insulator layer, heat-treating the barrier layer to release nitrogen gas from the titanium nitride film, forming a second titanium film on the barrier layer, and forming an aluminum film used as a wired metal on the second titanium film.
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