发明名称 |
Programmable memory devices supported by semiconductor substrates |
摘要 |
The invention includes a memory device supported by a semiconductor substrate and comprising in ascending order from the substrate: a floating gate, a dielectric material, a layer consisting essentially of tungsten nitride, a first mass consisting essentially of tungsten, and a second mass consisting essentially of one or more nitride compounds. The invention includes a memory device having a floating gate and a dielectric material over the floating gate. The device has a mass consisting essentially of tungsten over the dielectric material, with the mass having a pair of opposing sidewalls. A pair of sidewall spacers are along the opposing sidewalls of the mass. The sidewall spacers comprise a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer. The invention includes methods of making memory devices.
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申请公布号 |
US2004201060(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20040839331 |
申请日期 |
2004.05.04 |
申请人 |
RUDECK PAUL J;WOLSTENHOLME GRAHAM;CARR ROBERT |
发明人 |
RUDECK PAUL J;WOLSTENHOLME GRAHAM;CARR ROBERT |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/51;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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