发明名称 |
Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds |
摘要 |
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
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申请公布号 |
US2004201103(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20040835171 |
申请日期 |
2004.04.29 |
申请人 |
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发明人 |
YAU WAI-FAN;CHEUNG DAVID;JENG SHIN-PUU;LIU KUOWEI;YU YUNG-CHENG |
分类号 |
C23C16/40;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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